| Summary: | 碩士 === 臺灣大學 === 材料科學與工程學研究所 === 95 === There are two main topics in this thesis. First, we investigate the optical properties of metal films patterned by metal nanoimprint and reversal imprint technologies. Further, the research is applied for the enhancement of light extraction efficiency from organic light emitting diodes. Second, we prepare HMDSO to be a low dielectric and an antireflection layer in ArF optical lithography.
Recently, surface plasma of metal film with periodic structures was found to have extraordinary transmittance phenomenon, and has evoked great attention for the various applications. In this study, metal film with wavy structures is patterned by advanced metal nanoimprint technology. Various shape and depth of metal films are difficult to fabricate by conventional lithography processes. In this thesis, we successfully tune the depth and shape of patterned metal films with different pressure and mold, and find that the transmittance can be dramatically enhanced from 5% to 50%. Furthermore the optical mechanism is investigated by the finite-difference time domain (FDTD) method. Base on reversal imprint technology, we develop a novel metal reversal imprint technology for patterning deep metal film structure with various shapes in low temperature and pressure. The continuous metal film was found to have higher transmittance than non-continuous metal films with hole-array structures. In this study, we also successfully enhance the light extraction efficiency of OLED devices by nano-imprint metal technology.
With the progress of nano-technology, the requirement of next generation integrated circuits (IC) is definitely higher package density and speed. However, the resistance-capacitance (RC) time delay in high performance devices has become a serious problem. Therefore, it is more important to find novel low dielectric constant (low-K) materials for metal interconnection processes. In this study, we adjust the optical and dielectric properties of HMDSO with different process parameters, such as the flow ratio of O2, CHF3 and HMDSO with different plasma conditions. By increasing the participation of fluorine, the dielectric constant could be successfully reduced to less than 2.0. By optical thin film theoy, we find optimized low-K HMDSO films can also reduce the reflectance of various highly reflective to less than 1% for the reduction of the standing wave effect in ArF lithography.
|
|---|
