Heterojunction Effect on Ge Quantum Well pFETs and the SiGe Optoelectronics
碩士 === 國立臺灣大學 === 電子工程學研究所 === 95 === The band offset at the heterojunction of Si/epi-Ge/Si quantum well can have the critical influence on device characteristics. The Si-cap can be served as a passivation layer to facilitate further gate dielectrics growth and the possible strained Si channel. Desp...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60078129057540965250 |