Design of Millimeter-wave Switches and Bandpass Filter-Integrated Switches

• Main Authors: Shih-Fong Chao, 趙世峰
• Other Authors: 王暉
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/17290788329030880543

博士 === 國立臺灣大學 === 電信工程學研究所 === 95 === This dissertation includes the design of millimeter-wave switches and band-pass filter integrated switches for RF front end applications. The first part of the dissertation focuses on the design of millimeter-wave switches. Since the millimeter-wave witches are designed for applications above 50 GHz, the traveling-wave concept is utilized to minimize the insertion loss and achieve wideband performances. A single-pole-quadruple-throw (SPQT) using GaAs HEMT process is developed at W-band for automotive radar applications. Moreover, a multiple-port millimeter-wave switch using GaAs HEMT process is developed for the beam-former array at the RF front end of a 60-GHz communication system. A 50-95 GHz single-pole-double-throw (SPDT) using 90 nm bulk CMOS process is developed with competitive performances to those in GaAs HEMT process. The second part of the dissertation presents a new method to design band-pass filter-integrated switches. The bandpass filter-integrated switch integrates the functions a switch and a bandpass filter into a single circuit component, which can provide bandpass response with harmonic suppression in on-state and wideband isolation in off-state. The filter-integrated switches in this ertation are designed based on loaded stepped-impedance resonators to achieve narrow band pass frequency responses. The loaded stepped-impedance resonators behave as switchable sonators, which can change their resonant conditions under different bias voltage. Both the theories and design procedures of the filter-integrated switches are provided. Several design examples of the filter-integrated switches (SPST, SPDT, DPQT) are given to demonstrate their lications in communication systems. There are two 1.5 GHz hybrid SPST filter-integrated switches, which have 5% 3dB bandwidth with spurious suppression of 30 dB up to 7f0 and 10f0 in on-state, respectively. In off-state, their isolations are both greater than 30 dB from dc to 8f0. Another example is a 1.5 GHz hybrid SPDT filter-integrated switch. By roducing the shared resonator technique, the SPDT circuit can share the common resonators of the constituted SPST filter-integrated switches and save the area for a matching T-junction. Thus, a significant circuit size reduction can be achieved. Finally, a compact 40 GHz MMIC SPDT and amultiple-port filter-integrated switches aredeveloped for high level of SOC (system-on-chip) integrations.