Light Absorptive Underlayer Assisted Excimer Laser Crystallization and Its Application to Si Single-Grain Thin Film Transistors
碩士 === 國立臺灣科技大學 === 電子工程系 === 95 === In this paper, we make a study of the Light Absorptive (LA) film, and use the LA film to assist crystallizing Si grains in excimer laser annealing process. At Si (90 nm)/SiO2 (100 nm)/SiONx (1200 nm) structure, we can obtain the disc grain which diameter is about...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/62916503163939620891 |