| Summary: | 碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 95 === In this study, zinc oxide nanowires was successfully grown on ZnO/Si substrate using low-temperature aqueous solution method. We firstly study the influences of the ZnO buffer layer on the Si substrate on the crystal direction of zinc oxide nanowires. Then the effects of solution concentration, growth time, and the ratio of Zn(NO3)2 and C6H12N4 in the solution on the morphology and size of zinc oxide nanowires were also investigated.
Our experimental results indicate that the zinc oxide nanowires have uniform C-axis preferred orientation when the zinc oxide buffer layer grows along [0001] direction. The surface roughness of zinc oxide buffer layer would affect the nucleus sites of zinc oxide nanowires, the higher the surface roughness is, the larger number of the nucleus sites is, which leads to high number density of nanowires grown. If the solution is stirred incessantly, the growth rate of the nanowires increases. The diameter of zinc oxide nanowires is determined by the concentration of solution. In our experiment, we can obtain the high quality columnar grain with hexagonal structure when the concentration of solution is 0.05 M. If the content of Zn(NO3)2 is more than C6H12N4, the length of zinc oxide nanowires is almost equal and is increased with an increase of reaction time. We also can obtain other geometries of zinc oxide such as ZnO thin film or ZnO nanotube, by suitably controlling the processing parameters of reaction time and concentration.
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