| Summary: | 碩士 === 國立臺北科技大學 === 機電整合研究所 === 95 === A novel manufacturing technique of T-Type planar thermocouple by electroplating Ni-Cu alloy and electroless plating copper is demostrated. In this study, we electroplate Ni-Cu alloy on ITO substrate in room temperature. The deposited Cu compositions of Ni-Cu alloys can be varied from 40wt.%Cu by changing the current density. It is found that the Ni-56wt.%Cu electrodeposition can be made with 0.36ASD current density. On the other hand, directly plating copper on non-conductor surface is made based on the electroless technique. The electroplated thermocouple is estimated to work in the range of 40 oC ~140 oC. The greatest error is 0.2 oC, and the linearity and reproducibility of the temperature-emf relationship are very good. In addition, micro T-Type thermocouple can be made by the sputtering and photolithography process. In this study, the minimal width is about 100um. After calibration, the greatest error in temperature is 0.3 oC in the range of 40oC ~180 oC, and the linearity and reproducibility of the temperature-emf relationship are also very good.
|
|---|
