| Summary: | 碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 95 === The porous alumina template possessed fine array could be obtained by suitable anodization condition. This study sputtered Au layer on p-type silicon wafer first, and then evaporated Al on the Au layer. The Al layer was anodized to form porous template, so-called anodic aluminum oxide (AAO). The anodization was take placed in 2℃, 0.3 M oxalic acid solution, and applied 40 V about 15 minute. The result observed by FE-SEM, the pore diameter was about 20 nm. This experiment can obtain silicon based porous alumina template.
After finish the fabrication of silicon based porous alumina template, put the sample into thermal chemical vapor deposition. The Au layer sputtered on silicon wafer at first was utilized as catalyst. SiOx nanowire was growth from the bottom of the pore. We tried to verify Au layer deposition time and nanowire growth time, study the relation between field emission and these variables.
|
|---|
