The barrier layer shape of porous AAO substrate and its application

• Main Authors: Kuen-Ting Hung, 洪坤廷
• Other Authors: Chien-Sheng Huang
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/06971908451225784721

碩士 === 國立雲林科技大學 === 電子與資訊工程研究所 === 95 === The pore array of anodic alumina oxide (AAO) was achieved by good anodization condition. This research used a high pure aluminum sheet (99.999%), electropolished under the conditions of 20V, 25℃, 20min in the mixed solution composed of sulfuric acid (33%) - phosphoric acid (33%) - DI water (33%). The conditions of anodization were 40V, 0.3M oxalic acid solution, 5℃, 8 hours. Observed by SEM, the diameter of AAO pores was 30 nm. Highly ordered AAO array was obtained and the thickness of AAO was 20μm. After some pore widening process, Ni nanowires were formed by electrochemistry deposition method. The barrier layer of AAO array was reduced by lowing the anodic current, then the Ni nanowires were deposited. The length of Ni nanowires was examed by SEM, BEI, EDS. It showed that the Ni nanowires had been successfully fabricated within the nanopores. Such grown Ni nanowires could be used in the application of nano magnetic matericals.