| Summary: | 碩士 === 國立雲林科技大學 === 電子與資訊工程研究所 === 95 === We have demonstrated the memory effect by combining the advantages of a metal NC and a high-K tunneling barrier, an excellent hysteresis shift has been achieved in our research. The Ni film was successfully translated to Ni nanocrystals after RTA treatment. As the thickness of Ni film will get thinner and become easier to form nanocrystals in MOS structure. The magnitude of memory windows is related to density of Ni nanocrystals. From the results of different RTA treatment, we can find that the increase of heat temperature can actually help the formation of nanocrystals under enough energy. We see two types of hysteresis direction in our research. The counterclockwise hysteresis can be realized from the mechanism of charge injection between nanocrystals and substrate through the thin tunnel oxide. In contrast, the clockwise hysteresis has been attributed to the drift of positively charged mobile ions contaminated in the gate oxide, or the charge injection from gate.
The N2 was introduced to fix the defect inside tunnel oxide and cap oxide during RTA treatment, and lead the charge in the nanocrystals to increase. In other words, we believe that the memory windows can be improved by using high activity gas, i.e., H2 or O2 gas. And all the fabrication procedures are simple and use CMOS compatible processing with standard semiconductor equipments.
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