Application of Exposure Simulation System to Reduce Isolated-Dense Bias by Using Annular Off-Axis Illumination

碩士 === 元智大學 === 電機工程學系 === 95 === As the optical lithography is pushed into the smaller feature size below the exposure wavelength, the optical proximity effect (OPE) is one of the most serious problems. The way to solve this problem is to use optical proximity correction (OPC) or phase shift mask (...

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Bibliographic Details
Main Authors: Yi-Nan Shih, 石宜男
Other Authors: Nien-Po Chen
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/89228645650663503131

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