Integrated Radio Frequency Voltage Control Oscillator Circuitry

碩士 === 國立中正大學 === 電機工程所 === 96 === This thesis presents three integrated voltage controlled oscillators designed and manufactured by using TSMC 0.35 um CMOS technology and TSMC 0.18 um CMOS technology. The first circuitry is a complementary LC tank VCO with switching bias transistor technique. It...

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Bibliographic Details
Main Authors: Liang-Yeh Chi, 机亮燁
Other Authors: Janne-Wha Wu
Format: Others
Language:en_US
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/94218193811951620996
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Summary:碩士 === 國立中正大學 === 電機工程所 === 96 === This thesis presents three integrated voltage controlled oscillators designed and manufactured by using TSMC 0.35 um CMOS technology and TSMC 0.18 um CMOS technology. The first circuitry is a complementary LC tank VCO with switching bias transistor technique. It adopts PMOS as the bias transistor and uses a concept of continuous switching to reduce the flicker noise and improve the phase noise of VCO. This VCO is designed for the application of IEEE 802.16d system, and the operation frequency is ranging from 3.4 GHz to 3.7 GHz. The second circuitry is a dual-band complementary LC tank VCO which is designed for the application of IEEE 802.16 d/e. By using switching capacitors array, the VCO can operate at either 2.6 GHz or 3.5 GHz, separately. This topology can efficiently save the chip area, thus achieve low fabrication cost. The third circuitry is a NMOS-only LC tank VCO with linear-tuning technique. The linear-tuning characteristic (KVCO) is achieved by adopting a MOS varactor array which consists of three MOS varactors. The VCO is desired to be applicable to IEEE 802.11a system, and the operation frequency is ranging from 5.725 GHz to 5.825 GHz.