Characterization of Al2O3-TiO2 composite oxide films as the gate insulator layers prepared by solution-based process
碩士 === 逢甲大學 === 材料科學所 === 96 === This study successfully prepared Al2O3-TiO2 thin films by sol-gel process. Al2O3-TiO2 thin films have been deposited via spin coating from aqueous solution and utilized as gate insulator in TFT. Precursor solutions were prepared by the same functional group (or moiet...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/35943239841571154566 |