Characterization of Al2O3-TiO2 composite oxide films as the gate insulator layers prepared by solution-based process
碩士 === 逢甲大學 === 材料科學所 === 96 === This study successfully prepared Al2O3-TiO2 thin films by sol-gel process. Al2O3-TiO2 thin films have been deposited via spin coating from aqueous solution and utilized as gate insulator in TFT. Precursor solutions were prepared by the same functional group (or moiet...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35943239841571154566 |