| Summary: | 碩士 === 義守大學 === 電子工程學系碩士班 === 96 === Ba2Ti9O20, with high dielectric constant, low loss and temperature stable is suitable for dielectric resonators and is adopted as a material in the fabrication of high permittivity ceramic substrates. In this study, the barium titanate with different ratio of Ba/Ti were synthesized by using solid-state reaction technique. The calcinations was carried out at 1200℃ for 2 h. The effect of Bi2O3、V2O5 and B2O3 additions on low-temperature sintering have been investigated. The samples were sintered in the temperature range of 950–1050°C for 2 h. For Ba2Ti9O20 doped with 10 wt% Bi2O3 + 0.5 wt% V2O5 + 3 wt% B2O3 sintered at 1000 °C , the relative density was 91% ,single Ba2Ti9O20 phase was obtained dielectric. Dielectric constant is 36 , low-temperature coefficient of resonant frequencyτf is 13.5 ppm/℃ and Q×f =17098.
Microstrip filters are with the advantage of low insertion loss and compact size. In order to reduce the dimension of filters, higher dielectric constant materials were adopted in this study. A bandpass filter with center frequency at 2.39GHz and 3dB bandwidth 150MHz was implemented on Ba2Ti9O20 ceramic substrates. The insertion loss and return loss of the bandpass filter was -2.96 and -32.47dB,respectively.
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