| Summary: | 碩士 === 國立高雄應用科技大學 === 電子與資訊工程研究所碩士班 === 96 === This work investigates theoretically the transmission coefficients and the transport currents in a nano-scale MOSFET (ns-MOS) under the distorted fields. The transport currents have been calculated by the finite element approach and the multi-channel transfer-matrix (MCTM) method. In the ballistic regime, the scattering is absent when carriers transport from source to drain. However, additional scattering occurs due to distorted field which is formed by gate fringe effect and drain bias. This scattering exists in both long- and short-channel field effect transistors. In long-channel MOSFET, the influence of this scattering effect is difficult to distinguish from other effects, such as impurity, phonon, defect, and surface-roughness scatterings. However, the distorted field scattering becomes more and more evident in ns-MOS devices. Especially, the devices operate in the ballistic transport regime, where the distorted field makes ballistic transport non-ballistic.
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