Fabrication of Antireflection Structures on Flexible Organic Solar Cell Device by Using Nano-Imprint Technology

• Main Authors: Huang Ying Che, 黃英哲
• Other Authors: Hsu, Quang-Cherng
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/63242785951371147790

碩士 === 國立高雄應用科技大學 === 機械與精密工程研究所 === 96 === In recent years, due to micro-process technology development and progress, products with miniature structures become a trend. Among these technologies, nano imprint lithography emerges an important one, which is a simple, low cost and mass production process. By using micro/nano imprint lithography, micro/nano structures can be fabricated in a relatively easy way. Beside, anti-reflective structures become basic necessities in photo-electronic devices for their optic performance can be improved. In the current study, nano imprint lithography was used to create a sub-wave length anti-reflection structure in a organic solar cell component. The photo-electric transfer effect with and without anti-reflective layer was compared. By utilizing the stamp with micro structures of seven-section diode, two different kinds of stamp treatment, such as a duplicate soft mold of PDMS and DLC plating in this silicon-based stamp, as well as three different kinds of resist material, such as molecular weight of PMMA in 15K, 350K, 996K plus 15K in double layers, were studied. The better results with good nano structure formability belong to a duplicate soft mold of PDMS and molecular weight of PMMA in 350K or 996K plus 15K in double layers. As to PMMA of 15K, due to its extremely good flow ability, the pattern transfer is not good. Finally, the cyclical nano structure with sub-wave length of 265nm was fabricated as an anti-reflective layer and was integrated into an organic PV device. From experiments, the organic PV device without anti-reflective layer behaves Voc=0.10021V, Isc= 0.00260mA, FF= 19% and effetc=0.00021%; the organic PV device with the above anti-reflective layer behaves Voc=0.1401V, Isc= 0.01206mA, FF=18% and effetc=0.00123%, which shows that the latter perform well.