CMOS 0.18μm Ultra-Wideband Low Noise Amplifiers Design

• Main Authors: Jhong-yu Chen, 陳仲渝
• Other Authors: Chang-si Wu
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/03479524634037103562

碩士 === 龍華科技大學 === 電子工程研究所 === 96 === The basic function of the low noise amplifier (LNA) is to provide signal amplification while adding as little noise and distortion as possible to improve the overall noise figure and linearity of the front-end. This thesis uses TSMC 0.18μm 1P6M CMOS process’s RF model to design two Ultra-Wideband LNAs, it is applied on the systems of the IEEE 802.15.3a Wireless Personal Area Network (WPAN). One LNA is operating at 3G~5GHz, using folded cascade with Miller frequency compensation and introducing a zero to expand the bandwidth. Besides, the structure of PCSNIM[17] is introduced to obtain optimal design among noise, matching and power dissipation. And then, the following second stage can increase the gain higher than 15dB. By the Miller’s equivalent impedance of the shunt-shunt feedback, the input impedance matching can be achieved. The other LNA is designed operating at 3G~10GHz, using the wideband differential pair to achieve flat broadband gain and using the SNIM[17] structure with inductance and capacitance compensation to expand the bandwidth. The Advanced Design System (ADS) is used to simulate the design circuits and the chips are fabricated and measured by the aids of the CIC.