Design and Analysis on Amorphous Silicon Nanowire Thin FilmSolar Cell

• Main Authors: Chang-Wei Liu, 劉昌維
• Other Authors: 張書通
• Format: Others
• Language: en_US
• Online Access: http://ndltd.ncl.edu.tw/handle/33686211241553744421

碩士 === 國立中興大學 === 光電工程研究所 === 96 === One of the parameters that limit the efficiency of a thin film solar cell, especially the a-Si and the nc-Si solar cell is the cell thickness. Although thicker film can absorb most of the sun light, the optical generated carriers will recombine through the numerous gap states in the film that obtain lower short circuit current and fill factor. In the controversy, thinner film can not absorb enough sun light that also limit the short circuit current. In this work, we utilize nanowire structure to solve the conflict between the light absorption and the carrier transport. The designed structure has ZnO:Al nanowire array or n-type a-Si nanowire array on the substrate. The p-i-n a-Si solar cell structure is grown along the surface of each nanowire sequentially. Under sunlight illumination, the light is absorbed in the axis direction of the nanowire. However, the carrier transport is along the radial direction of the solar cell. Therefore, the long nanowire can absorb most of the solar light. In the meantime, the thickness of the solar cell still is thin enough for photo-generated carrier transport. The dependence of short circuit current, open circuit voltage and fill factor to the length, diameter and density of ZnO:Al nanowires are simulated.