| Summary: | 碩士 === 國立中興大學 === 材料科學與工程學系 === 96 === Abstract
In this study, the multi -element TiVCrZrTa alloy was deposited on silicon substrate via the reactive sputtering method. Several analysis methods were introduced in order to characterization the structure and properties of the TiVCrZrTa metallic and nitride film. The process parameters for deposition such nitrogen flow rate and substrate bias were manipulated in order to examine their influences on evolution of the structure and properties of the HE alloy films.
From the analytical results, the metallic TiVCrZrTa HE alloy film appears to be a nano-crystalline solid solution and with the addition of nitrogen during the deposition process, the film structure exhibits a typical FCC diffraction pattern. As the nitrogen flow ratio increasing, the diffraction intensities of the peak become weak and broaden, the film morphology turn to flat and smooth. For another processing parameter, substrate bias was added to the deposition process under constant nitrogen flow ratio in order to explore the bias effect on film structure. The XRD analysis shows that the film exhibit enhanced (111) preferred orientation and the aggregation of the cluster on film surface has also enlarged as bias voltage increased. The addition of substrate bias resulted in better surface mobility of ad-atoms and enlarge of cluster size together with the surface roughness has also increased.
The structure and properties of the as-deposited film after annealing treatment were further studied. It can be observed that the surface morphology and structure for the specimens complete different film appearance and structure were observed for specimens annealing at 800℃ and above. The granular particle and porous structure had formed and film surface roughness and thickness were also inflated with the increasing of annealing temperature. Base on the analytical results, it can be presumed that the oxidation of HE alloy film has initially observed for specimen with 600℃ annealing and then become heavily oxidizes at 800℃.
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