Effects of Laser Annealing on Characteristics of Silicon Heterojunction Solar Cells

碩士 === 國立中興大學 === 精密工程學系所 === 96 === The heterojunction solar cell based on silicon (Si) is one of the new wafer-type structures for photovoltaic application, which features the stability and high efficiency of single-crystalline or polycrystalline Si solar cells. The lower process temperature is an...

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Main Authors: Meng-Shen Wan, 萬孟昇
Other Authors: 武東星
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/50580546100770227663
id ndltd-TW-096NCHU5693016
record_format oai_dc
spelling ndltd-TW-096NCHU56930162016-05-09T04:13:42Z http://ndltd.ncl.edu.tw/handle/50580546100770227663 Effects of Laser Annealing on Characteristics of Silicon Heterojunction Solar Cells 雷射退火對矽異質接面太陽電池之特性影響研究 Meng-Shen Wan 萬孟昇 碩士 國立中興大學 精密工程學系所 96 The heterojunction solar cell based on silicon (Si) is one of the new wafer-type structures for photovoltaic application, which features the stability and high efficiency of single-crystalline or polycrystalline Si solar cells. The lower process temperature is another advantage of the Si heterojunction solar cell as compared with that used for the bulk Si wafer one. Therefore, this research topic has been received intensive attention in recent years. In this thesis, the U.S patents related to the Si heterojunction solar cells have been analyzed to understand the latest technique and development, so as to create a new process with low cost and high efficiency. In our experiments, the hot-wire chemical vapor deposition (CVD) was adopted to deposit μc-Si:H/c-Si heterojunction layer, and the Nd-YAG laser was applied to proceed annealing toward emitter layer with different laser power levels, in that, to re-crystallize the micro-crystal Si. The quality of Si films and the conversion efficiency of components can be improved effectively. After that, the different laser powers have been used to anneal to improve the ohmic contact characteristics between the electrode and emitter layer. The obtained results emphasize that the conversion efficiency can be actually increased by applied the laser annealing technique to μc-Si:H/c-Si heterojunction solar cell. The short-circuit current density and fill factor of components were increased after laser annealing. After optimizing the process parameters, the study resulted in a conversion efficiency 12.47 %, fill factor of 0.67, short-circuit current density of 30.53 mA/cm2, and open circuit voltage of 0.613 volt. Therefore, the laser annealing technique is expected to achieve high efficiency Si heterojunction solar cells in the future. 武東星 2008 學位論文 ; thesis 83 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中興大學 === 精密工程學系所 === 96 === The heterojunction solar cell based on silicon (Si) is one of the new wafer-type structures for photovoltaic application, which features the stability and high efficiency of single-crystalline or polycrystalline Si solar cells. The lower process temperature is another advantage of the Si heterojunction solar cell as compared with that used for the bulk Si wafer one. Therefore, this research topic has been received intensive attention in recent years. In this thesis, the U.S patents related to the Si heterojunction solar cells have been analyzed to understand the latest technique and development, so as to create a new process with low cost and high efficiency. In our experiments, the hot-wire chemical vapor deposition (CVD) was adopted to deposit μc-Si:H/c-Si heterojunction layer, and the Nd-YAG laser was applied to proceed annealing toward emitter layer with different laser power levels, in that, to re-crystallize the micro-crystal Si. The quality of Si films and the conversion efficiency of components can be improved effectively. After that, the different laser powers have been used to anneal to improve the ohmic contact characteristics between the electrode and emitter layer. The obtained results emphasize that the conversion efficiency can be actually increased by applied the laser annealing technique to μc-Si:H/c-Si heterojunction solar cell. The short-circuit current density and fill factor of components were increased after laser annealing. After optimizing the process parameters, the study resulted in a conversion efficiency 12.47 %, fill factor of 0.67, short-circuit current density of 30.53 mA/cm2, and open circuit voltage of 0.613 volt. Therefore, the laser annealing technique is expected to achieve high efficiency Si heterojunction solar cells in the future.
author2 武東星
author_facet 武東星
Meng-Shen Wan
萬孟昇
author Meng-Shen Wan
萬孟昇
spellingShingle Meng-Shen Wan
萬孟昇
Effects of Laser Annealing on Characteristics of Silicon Heterojunction Solar Cells
author_sort Meng-Shen Wan
title Effects of Laser Annealing on Characteristics of Silicon Heterojunction Solar Cells
title_short Effects of Laser Annealing on Characteristics of Silicon Heterojunction Solar Cells
title_full Effects of Laser Annealing on Characteristics of Silicon Heterojunction Solar Cells
title_fullStr Effects of Laser Annealing on Characteristics of Silicon Heterojunction Solar Cells
title_full_unstemmed Effects of Laser Annealing on Characteristics of Silicon Heterojunction Solar Cells
title_sort effects of laser annealing on characteristics of silicon heterojunction solar cells
publishDate 2008
url http://ndltd.ncl.edu.tw/handle/50580546100770227663
work_keys_str_mv AT mengshenwan effectsoflaserannealingoncharacteristicsofsiliconheterojunctionsolarcells
AT wànmèngshēng effectsoflaserannealingoncharacteristicsofsiliconheterojunctionsolarcells
AT mengshenwan léishètuìhuǒduìxìyìzhìjiēmiàntàiyángdiànchízhītèxìngyǐngxiǎngyánjiū
AT wànmèngshēng léishètuìhuǒduìxìyìzhìjiēmiàntàiyángdiànchízhītèxìngyǐngxiǎngyánjiū
_version_ 1718263039956877312