| Summary: | 碩士 === 國立成功大學 === 化學工程學系碩博士班 === 96 === This subject is divided into two parts. The first is the fabrication of organic light emitting devices by employing a novel fluorescent material namely 1,4-dipyrenyl benzene(DPB). From material property analysis, we found that the HOMO and LUMO energy level of DPB were measured to be 5.66 and 2.48 eV respectively, and the bandgap was about 3.18 eV. Then, the bottom-emission devices were fabricated with DPB. While the device was in the structure of ITO/NPB(50nm)/DPB(30nm)/Bpy-OXD(10nm)/LiF(1nm) /Al(40nm), a maximum brightness of 485 cd/m2 was obtained. Besides, Bpy-OXD can lower the barrier between the cathode and organic layer, and reduce the turn-on voltage. However, according to the brightness-voltage characteristics, photoluminescence spectrum, and electroluminescence spectrum of devices with different hole-transport layers, we found that DPB was acted as a UV emitter rather than a blue emitter.
The second part is the fabrication of organic/inorganic heterojunction devices incorporating an inorganic material, gallium nitride. The fabricated device was in the structure of IZO(or Ag)/CuPc:F4-TCNQ(15nm)/NPB(25nm)/Alq3(50nm)/n-GaN/Al(30nm). By measuring current-voltage characteristics for electron-only device, the aluminum electrode could enhance the amount of electron injection. In addition, when the devices were used silver as an anode, the current-voltage tendency was much more stable than that one used IZO. We observed that the electroluminescence spectrum of devices was fitted in with the photoluminescence spectrum of Alq3, and confirmed the carrier confinement by using gallium nitride.
|
|---|
