Improvement of GaAs Solar Cell efficiency by Micro-hole Array surface texture fabrication
碩士 === 國立交通大學 === 光電工程系所 === 96 === III-V compound semiconductor solar cell was fabricated and studied in the thesis. With an aim to improve the conversion efficiency, the InGaP p-n junction top cell was firstly fabricated by a new surface treatment of micro-hole array surface texture process. The p...
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ndltd-TW-096NCTU51240542015-10-13T13:51:51Z http://ndltd.ncl.edu.tw/handle/93891754289346937828 Improvement of GaAs Solar Cell efficiency by Micro-hole Array surface texture fabrication 陣列微米孔洞表面糙化製程對於砷化鎵太陽電池效率之影響 Su-Fang Yang 楊恕帆 碩士 國立交通大學 光電工程系所 96 III-V compound semiconductor solar cell was fabricated and studied in the thesis. With an aim to improve the conversion efficiency, the InGaP p-n junction top cell was firstly fabricated by a new surface treatment of micro-hole array surface texture process. The periods of micro-hole array were arranged to be 5, 10, 15 and 20 �慆, respectively. The conversion efficiency of the top InGaP p-n junction solarcell could be improved by micro-hole array surface texture process. It was found that with 5um micro hole array period, the efficiency was improved from 13.86% (standard process) to 15.93% while a single-layer SiO2 anti-reflection coating film was evaporated. To further improve the InGaP solar cell conversion efficiency, we had also used double-layer TiO2/MgF2 anti-reflection coating film, and we found that the efficiency was improved to 16.28% efficiency under AM 1.5g illumination. Secondly, the fabrication of GaAs p-n junction solar cell was studied. We also tried to improve the conversion efficiency of the GaAs solar cell when the cell was under high illumination concentration. A conversion efficiency of 22.68% (AM 1.5g 100 mW/cm2 25 ˚C) was achieved by using a 2.9% metal shielding mask design. To improve the conversion efficiency of the GaAs solar cell when the cell was under high illumination concentration, a radiative pattern for the metal grid was designed and the GaAs solar cell was measured under 1-sun to 200-suns. The conversion efficiency of the GaAs solar cell was increased with increased concentration ratio. A maximum conversion efficiency of ~28.1% was obtained. Hao-Chung Kuo Tien-Chang Lu 郭浩中 盧廷昌 2008 學位論文 ; thesis 63 zh-TW |
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碩士 === 國立交通大學 === 光電工程系所 === 96 === III-V compound semiconductor solar cell was fabricated and studied in the thesis. With an aim to improve the conversion efficiency, the InGaP p-n junction top cell was firstly fabricated by a new surface treatment of micro-hole array surface texture process. The periods of micro-hole array were arranged to be 5, 10, 15 and 20 �慆, respectively. The conversion efficiency of the top InGaP p-n junction solarcell could be improved by micro-hole array surface texture process. It was found that with 5um micro hole array period, the efficiency was improved from 13.86% (standard process) to 15.93% while a single-layer SiO2 anti-reflection coating film was evaporated. To further improve the InGaP solar cell conversion efficiency, we had also used double-layer TiO2/MgF2 anti-reflection coating film, and we found that the efficiency was improved to 16.28% efficiency under AM 1.5g illumination.
Secondly, the fabrication of GaAs p-n junction solar cell was studied. We also tried to improve the conversion efficiency of the GaAs solar cell when the cell was under high illumination concentration. A conversion efficiency of 22.68% (AM 1.5g 100 mW/cm2 25 ˚C) was achieved by using a 2.9% metal shielding mask design. To improve the conversion efficiency of the GaAs solar cell when the cell was under high illumination concentration, a radiative pattern for the metal grid was designed and the GaAs solar cell was measured under 1-sun to 200-suns. The conversion efficiency of the GaAs solar cell was increased with increased concentration ratio. A maximum conversion efficiency of ~28.1% was obtained.
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author2 |
Hao-Chung Kuo |
author_facet |
Hao-Chung Kuo Su-Fang Yang 楊恕帆 |
author |
Su-Fang Yang 楊恕帆 |
spellingShingle |
Su-Fang Yang 楊恕帆 Improvement of GaAs Solar Cell efficiency by Micro-hole Array surface texture fabrication |
author_sort |
Su-Fang Yang |
title |
Improvement of GaAs Solar Cell efficiency by Micro-hole Array surface texture fabrication |
title_short |
Improvement of GaAs Solar Cell efficiency by Micro-hole Array surface texture fabrication |
title_full |
Improvement of GaAs Solar Cell efficiency by Micro-hole Array surface texture fabrication |
title_fullStr |
Improvement of GaAs Solar Cell efficiency by Micro-hole Array surface texture fabrication |
title_full_unstemmed |
Improvement of GaAs Solar Cell efficiency by Micro-hole Array surface texture fabrication |
title_sort |
improvement of gaas solar cell efficiency by micro-hole array surface texture fabrication |
publishDate |
2008 |
url |
http://ndltd.ncl.edu.tw/handle/93891754289346937828 |
work_keys_str_mv |
AT sufangyang improvementofgaassolarcellefficiencybymicroholearraysurfacetexturefabrication AT yángshùfān improvementofgaassolarcellefficiencybymicroholearraysurfacetexturefabrication AT sufangyang zhènlièwēimǐkǒngdòngbiǎomiàncāohuàzhìchéngduìyúshēnhuàjiātàiyángdiànchíxiàolǜzhīyǐngxiǎng AT yángshùfān zhènlièwēimǐkǒngdòngbiǎomiàncāohuàzhìchéngduìyúshēnhuàjiātàiyángdiànchíxiàolǜzhīyǐngxiǎng |
_version_ |
1717744381077749760 |