Theoretical Studies of InGaN/GaN Laser Diodes
博士 === 國立交通大學 === 電子工程系所 === 96 === In this dissertation, the InGaN/GaN laser diode is theoretically studied. We have optimized its active region and the cladding layer composed of a p-type AlGaN/GaN superlattice by studying the spillover effect, the influence of dopants, and the key factor making t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05698630068849835891 |