Theoretical Studies of InGaN/GaN Laser Diodes
博士 === 國立交通大學 === 電子工程系所 === 96 === In this dissertation, the InGaN/GaN laser diode is theoretically studied. We have optimized its active region and the cladding layer composed of a p-type AlGaN/GaN superlattice by studying the spillover effect, the influence of dopants, and the key factor making t...
Main Authors: | Shyh-Jer Huang, 黃士哲 |
---|---|
Other Authors: | Shun-Tung Yen |
Format: | Others |
Language: | en_US |
Published: |
2007
|
Online Access: | http://ndltd.ncl.edu.tw/handle/05698630068849835891 |
Similar Items
-
Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
by: Liwen Cheng, et al.
Published: (2021-08-01) -
The Fabrication and Analysis of InGaN/GaN MQWs Laser Diode
by: Cheng-Hsueh Lu, et al.
Published: (2006) -
Effect on Photoelectric Characteristics of Blue Light-Emitting Diodes by Doping in InGaN of GaN/InGaN/GaN
by: Yi Chang Yang, et al.
Published: (2014) -
Investigation of InGaN/GaN Light Emitting Diode
by: Chia-Ming Lee, et al.
Published: (2004) -
Investigation of InGaN/GaN Light Emitting Diode
by: Yu-Chuan Liu, et al.
Published: (2004)