Optical characteristics of type-II Zn0.97Mn0.03Se/ZnSe1-xTex multiple quantum wells
碩士 === 國立交通大學 === 電子物理系所 === 96 === The Zn0.97Mn0.03Se/ZnSe1-xTex (x = 0.08 and 0.20) multiple quantum wells (MQWs) grown by molecular beam epitaxy were studied by photoluminescence (PL) measurements. The ZnSe1-xTex well thickness varies among 2, 3, and, 5 nm. The PL peak energy shows a giant blue-s...
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/hx6637 |
| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 96 === The Zn0.97Mn0.03Se/ZnSe1-xTex (x = 0.08 and 0.20) multiple quantum wells (MQWs) grown by molecular beam epitaxy were studied by photoluminescence (PL) measurements. The ZnSe1-xTex well thickness varies among 2, 3, and, 5 nm. The PL peak energy shows a giant blue-shift with excitation power due to the band-bending effect. The activation energies of the MQWs were also obtained by temperature-dependent PL measurements. We also studied the mechanism of carrier recombination by the time-resolved photoluminescence (TRPL) experiments. The dependence of PL lifetimes on the Te concentration and well width can be explained by the variation of electron-hole wavefunction overlapping. Moreover, the non-single-exponential PL decays of the power-dependent TRPL measurements can be understood by the band-bending model.
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