Optical characteristics of type-II Zn0.97Mn0.03Se/ZnSe1-xTex multiple quantum wells
碩士 === 國立交通大學 === 電子物理系所 === 96 === The Zn0.97Mn0.03Se/ZnSe1-xTex (x = 0.08 and 0.20) multiple quantum wells (MQWs) grown by molecular beam epitaxy were studied by photoluminescence (PL) measurements. The ZnSe1-xTex well thickness varies among 2, 3, and, 5 nm. The PL peak energy shows a giant blue-s...
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ndltd-TW-096NCTU54290122019-05-15T19:39:36Z http://ndltd.ncl.edu.tw/handle/hx6637 Optical characteristics of type-II Zn0.97Mn0.03Se/ZnSe1-xTex multiple quantum wells 第二型能帶結構硒化錳鋅/碲硒化鋅多重量子井之光學特性研究 Ching-hsueh Chiu 邱鏡學 碩士 國立交通大學 電子物理系所 96 The Zn0.97Mn0.03Se/ZnSe1-xTex (x = 0.08 and 0.20) multiple quantum wells (MQWs) grown by molecular beam epitaxy were studied by photoluminescence (PL) measurements. The ZnSe1-xTex well thickness varies among 2, 3, and, 5 nm. The PL peak energy shows a giant blue-shift with excitation power due to the band-bending effect. The activation energies of the MQWs were also obtained by temperature-dependent PL measurements. We also studied the mechanism of carrier recombination by the time-resolved photoluminescence (TRPL) experiments. The dependence of PL lifetimes on the Te concentration and well width can be explained by the variation of electron-hole wavefunction overlapping. Moreover, the non-single-exponential PL decays of the power-dependent TRPL measurements can be understood by the band-bending model. Wu-ching Chou 周武清 2008 學位論文 ; thesis 33 en_US |
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碩士 === 國立交通大學 === 電子物理系所 === 96 === The Zn0.97Mn0.03Se/ZnSe1-xTex (x = 0.08 and 0.20) multiple quantum wells (MQWs) grown by molecular beam epitaxy were studied by photoluminescence (PL) measurements. The ZnSe1-xTex well thickness varies among 2, 3, and, 5 nm. The PL peak energy shows a giant blue-shift with excitation power due to the band-bending effect. The activation energies of the MQWs were also obtained by temperature-dependent PL measurements. We also studied the mechanism of carrier recombination by the time-resolved photoluminescence (TRPL) experiments. The dependence of PL lifetimes on the Te concentration and well width can be explained by the variation of electron-hole wavefunction overlapping. Moreover, the non-single-exponential PL decays of the power-dependent TRPL measurements can be understood by the band-bending model.
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Wu-ching Chou |
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Wu-ching Chou Ching-hsueh Chiu 邱鏡學 |
author |
Ching-hsueh Chiu 邱鏡學 |
spellingShingle |
Ching-hsueh Chiu 邱鏡學 Optical characteristics of type-II Zn0.97Mn0.03Se/ZnSe1-xTex multiple quantum wells |
author_sort |
Ching-hsueh Chiu |
title |
Optical characteristics of type-II Zn0.97Mn0.03Se/ZnSe1-xTex multiple quantum wells |
title_short |
Optical characteristics of type-II Zn0.97Mn0.03Se/ZnSe1-xTex multiple quantum wells |
title_full |
Optical characteristics of type-II Zn0.97Mn0.03Se/ZnSe1-xTex multiple quantum wells |
title_fullStr |
Optical characteristics of type-II Zn0.97Mn0.03Se/ZnSe1-xTex multiple quantum wells |
title_full_unstemmed |
Optical characteristics of type-II Zn0.97Mn0.03Se/ZnSe1-xTex multiple quantum wells |
title_sort |
optical characteristics of type-ii zn0.97mn0.03se/znse1-xtex multiple quantum wells |
publishDate |
2008 |
url |
http://ndltd.ncl.edu.tw/handle/hx6637 |
work_keys_str_mv |
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