Improvement on pH-Sensing Device Constructed of IrO2 and Ta2O5 Films
碩士 === 國立交通大學 === 電子物理系所 === 96 === ISFET, Ion Sensitive Field Effect Transistor, was first proposed by Piet Bergveld in 1970 to have ion sensitivity and field-effect transistor components of micro-chemical sensors. The ISFET is in accordance with the process technology, MOSFET, and can be mass-prod...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/25544141179877598004 |
id |
ndltd-TW-096NCTU5429055 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-096NCTU54290552015-10-13T12:18:06Z http://ndltd.ncl.edu.tw/handle/25544141179877598004 Improvement on pH-Sensing Device Constructed of IrO2 and Ta2O5 Films 改良型五氧化二鉭與氧化銥薄膜氫離子感測電極之研究 Chao-Ting Chen 陳昭廷 碩士 國立交通大學 電子物理系所 96 ISFET, Ion Sensitive Field Effect Transistor, was first proposed by Piet Bergveld in 1970 to have ion sensitivity and field-effect transistor components of micro-chemical sensors. The ISFET is in accordance with the process technology, MOSFET, and can be mass-produced. Using the RF magnetron sputtering method, iridium oxide is electroplated onto the platinum electrode as a hydrogen ion sensors film. Then a thin layer of tantalum oxide film is sputtered on the electrode as an ion-selective membrane that coats the iridium oxide. This will produce a hydrogen ion sensing electrode that is selective toward hydrogen ions with linear work areas that are in between pH2 and pH12, and a sensitivity of 56.03 mV / pH. The hydrogen ion sensing electrode has advantages of good stability and reproducibility, and an average response time of 20 seconds to changes in the pH of the solution. It is resistant to acid corrosion, and has a lifetime that is at least four months. Shu-Chi Chao 趙書琦 2008 學位論文 ; thesis 70 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立交通大學 === 電子物理系所 === 96 === ISFET, Ion Sensitive Field Effect Transistor, was first proposed by Piet Bergveld in 1970 to have ion sensitivity and field-effect transistor components of micro-chemical sensors. The ISFET is in accordance with the process technology, MOSFET, and can be mass-produced.
Using the RF magnetron sputtering method, iridium oxide is electroplated onto the platinum electrode as a hydrogen ion sensors film. Then a thin layer of tantalum oxide film is sputtered on the electrode as an ion-selective membrane that coats the iridium oxide. This will produce a hydrogen ion sensing electrode that is selective toward hydrogen ions with linear work areas that are in between pH2 and pH12, and a sensitivity of 56.03 mV / pH. The hydrogen ion sensing electrode has advantages of good stability and reproducibility, and an average response time of 20 seconds to changes in the pH of the solution. It is resistant to acid corrosion, and has a lifetime that is at least four months.
|
author2 |
Shu-Chi Chao |
author_facet |
Shu-Chi Chao Chao-Ting Chen 陳昭廷 |
author |
Chao-Ting Chen 陳昭廷 |
spellingShingle |
Chao-Ting Chen 陳昭廷 Improvement on pH-Sensing Device Constructed of IrO2 and Ta2O5 Films |
author_sort |
Chao-Ting Chen |
title |
Improvement on pH-Sensing Device Constructed of IrO2 and Ta2O5 Films |
title_short |
Improvement on pH-Sensing Device Constructed of IrO2 and Ta2O5 Films |
title_full |
Improvement on pH-Sensing Device Constructed of IrO2 and Ta2O5 Films |
title_fullStr |
Improvement on pH-Sensing Device Constructed of IrO2 and Ta2O5 Films |
title_full_unstemmed |
Improvement on pH-Sensing Device Constructed of IrO2 and Ta2O5 Films |
title_sort |
improvement on ph-sensing device constructed of iro2 and ta2o5 films |
publishDate |
2008 |
url |
http://ndltd.ncl.edu.tw/handle/25544141179877598004 |
work_keys_str_mv |
AT chaotingchen improvementonphsensingdeviceconstructedofiro2andta2o5films AT chénzhāotíng improvementonphsensingdeviceconstructedofiro2andta2o5films AT chaotingchen gǎiliángxíngwǔyǎnghuàèrtǎnyǔyǎnghuàyībáomóqīnglízigǎncèdiànjízhīyánjiū AT chénzhāotíng gǎiliángxíngwǔyǎnghuàèrtǎnyǔyǎnghuàyībáomóqīnglízigǎncèdiànjízhīyánjiū |
_version_ |
1716857845047099392 |