Improvement on pH-Sensing Device Constructed of IrO2 and Ta2O5 Films
碩士 === 國立交通大學 === 電子物理系所 === 96 === ISFET, Ion Sensitive Field Effect Transistor, was first proposed by Piet Bergveld in 1970 to have ion sensitivity and field-effect transistor components of micro-chemical sensors. The ISFET is in accordance with the process technology, MOSFET, and can be mass-prod...
Main Authors: | Chao-Ting Chen, 陳昭廷 |
---|---|
Other Authors: | Shu-Chi Chao |
Format: | Others |
Language: | zh-TW |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/25544141179877598004 |
Similar Items
-
The Electrochemical Behaviors of pH-Sensing Device Constructed by RF Sputtered Ta2O5 and IrO2 Films
by: Chien-Chia Lu, et al.
Published: (2007) -
The Improvement of IrO2-based Sensing Device
by: Chienchung Hsu, et al.
Published: (1999) -
The Study of H2S Sensing in WO3/IrO2 devices
by: Su, Chin-Yu, et al.
Published: (2009) -
The Research of pH sensors based on WO3/IrO2 Diode Device
by: Yi-Lin Chaung, et al.
Published: (2003) -
Theoretical Study of methanol adsorption and dehydrogenation on IrO2(110), Ir/IrO2(110) and O/IrO2(110) surface
by: Chien-Fang Chuang, et al.
Published: (2008)