| Summary: | 碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === This thesis mainly addresses several novel parameter extraction methods that are particularly suitable for highly scaled MOSFETs. First of all, the three key process parameters (namely, the gate polysilicon doping concentration, the gate oxide physical thickness, and the channel doping concentration) are extracted via C-V fitting by means of the two methods: one of the Shrödinger-Poisson equation solving and one of the triangular potential approximation. Then a new constant-mobility method is adopted to extract the source/drain series resistance Rsd, which, unlike the conventional counterparts, requires only simple DC measurements on a single test device. Once Rsd is extracted, we can quantitatively distinguish between the gate length at the mask level and the channel metallurgical length, which is achieved with the improved methodology. Even the source/drain extension and its doping concentration can be extracted using the edge direct tunneling technique. Finally, the carrier mobility in the channel, as well as the threshold voltage, can be
straightforwardly extracted.
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