Accurate Parameter Extraction Methods for Highly Scaled MOSFETs
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === This thesis mainly addresses several novel parameter extraction methods that are particularly suitable for highly scaled MOSFETs. First of all, the three key process parameters (namely, the gate polysilicon doping concentration, the gate oxide physical th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80977718722420175949 |