Accurate Parameter Extraction Methods for Highly Scaled MOSFETs
碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 96 === This thesis mainly addresses several novel parameter extraction methods that are particularly suitable for highly scaled MOSFETs. First of all, the three key process parameters (namely, the gate polysilicon doping concentration, the gate oxide physical th...
Main Authors: | Yen-Ming Chen, 陳彥銘 |
---|---|
Other Authors: | Ming-Jer Chen |
Format: | Others |
Language: | en_US |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/80977718722420175949 |
Similar Items
-
The extraction of MOSFET parameters.
Published: (1988) -
Automated MOSFET parameter extraction
by: Lui, Jerome C. (Jerome Chun Lung)
Published: (2007) -
RF MOSFET Substrate Modeling and A New Parameter Direct Extraction Method
by: Yen-Tang Huang, et al.
Published: (2005) -
A study of parameter extraction of the mosfet
by: ZHANG, WEN-YUE, et al.
Published: (1988) -
MOSFET model and optimal parameter extraction
by: LI, JIA-RUI, et al.
Published: (1988)