Reversible Photoinduced Effects in Nonvolatile Memory Device Based on Hafnium-silicate Dielectric
碩士 === 國立交通大學 === 顯示科技研究所 === 96 === This work describes the memory effect in pentacene-based organic thin-film transistors (OTFTs) with a high-dielectric gate insulator, hafnium silicate, which is a suitable material for the trapped-induced effect due to its dual-phase structure consisting of the a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85554704465643683872 |