Study on SiGe Power HBT Design and High-Frequency Substrate Noise Isolation in BiCMOS Technology
博士 === 國立中央大學 === 電機工程研究所 === 96 === Silicon-germanium heterojunction bipolar transistors (SiGe HBTs) technology has emerged as a new contender for RF and microwave applications. The major advantages of SiGe HBT include its superior microwave power performance, low cost, high thermal conductivity, a...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/44854557409871060402 |