Numerical Studies on Structural and Optoelectronic Properties of White Organic Light-Emitting Diodes

碩士 === 國立彰化師範大學 === 物理學系 === 96 === The Organic Light-Emitting Diode (OLED) has been extensively developed in the past few years. Recently, after extensive investigation by different research groups and companies, the development of organic electroluminescent (EL) materials has a considerable progre...

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Bibliographic Details
Main Authors: Chien-Yang Wen, 溫健揚
Other Authors: Yen-Kuang Kuo
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/46685875947521745593
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Summary:碩士 === 國立彰化師範大學 === 物理學系 === 96 === The Organic Light-Emitting Diode (OLED) has been extensively developed in the past few years. Recently, after extensive investigation by different research groups and companies, the development of organic electroluminescent (EL) materials has a considerable progress. The next generation displays based on the OLED technology possess many advantages, e.g. thin thickness, light weight, high brightness, fast response time, large viewing angle, high contrast, low driving power, flexibility, and capability of self-emission as compared with the other displays, e.g. CRT, LCD, and PDP. The structural design of the White Organic Light-Emitting Diode (WOLED) is a key point for mass production of the OLED displays. In this thesis, the optimizations of the optical and electronic properties of the WOLED devices are numerically studied. In chapter 1, the characteristics of the OLED, which includes the advantages, disadvantages and structures, are introduced. Moreover, the development of the OLED displays and comparison of the performance with other kinds of displays are also discussed. In chapter 2, the concepts of the chromatology, including the vision, spectral sensitivity, color specification and color matching, are introduced. It is very important for the design of the WOLEDs. In chapter 3, I investigate the carrier injection characteristics within the WOLED. Firstly, the real device with ITO/TPD/Alq3/LiF/Al materials fabricated by Park et al. (Current Applied Physics 1, 116, 2001) is modeled by using the APSYS (abbreviation of Advanced Physical Model of Simulation Devices) simulation program. Secondly, different numbers of (Alq3:DCJTB/Alq3)n dotted-line doped layer (DLDL) used as emitting layer (EML) are studied and compared numerically. Furthermore, to figure out the influence of the DLDL on the performance of the WOLED, the energy band diagrams, electron-hole recombination rates, electroluminescence, current-voltage, and luminance-current characteristics are presented and discussed. Finally, for the purpose of lighting, the absolute white light is attempted to be obtained by tuning the forward voltage and the corresponding information is also offered in this work.