Influence of pinned layer coupling on magnetization switching of magnetic tunnel junction
碩士 === 國立彰化師範大學 === 光電科技研究所 === 96 === Abstract The experiment use the structure of MTJ, CoFe(tnm) / MgO(4nm) / NiFe(30nm) and changing the different pinned layer (CoFe) thickness to discuss the influence of the stray field of pinned layer for free layer(NiFe) of self-element. The elements made by...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/15155985825804585385 |