Anomalous Hall Effect of InN
碩士 === 國立中山大學 === 物理學系研究所 === 96 === The electrical conductivity of InN, group III-V semiconductor, is measured by four point measurement at low temperatures and high magnetic fields. From Resistance Vs temperature measurements (done in the absence of magnetic field) there is a transition from semic...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dtydwd |
| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 96 === The electrical conductivity of InN, group III-V semiconductor, is measured by four point measurement at low temperatures and high magnetic fields. From Resistance Vs temperature measurements (done in the absence of magnetic field) there is a transition from semiconducting state to superconducting state at 2.5K. This superconducting state disappears when the measurements are repeated but at a magnetic field of 0.1 Tesla. Mover the Hall voltage is not proportional to the magnetic field.
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