Time-Resolved Photoluminescence Study of InGaN Nanostructures

• Main Authors: Chi-Chang Hong, 洪誌彰
• Other Authors: Shangjr Gwo
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/06068881970735295236

碩士 === 國立清華大學 === 物理學系 === 96 === InGaN nanostructures which included nanorods, epilayer, and nanodisks were studied by time-resolved photoluminescence (TRPL) measurement. This master thesis contains two parts of experimental results. One is the bright green emission from InGaN nanorods compared to InGaN epilayer. The other one is the investigation of optical properties of InGaN disk. In part one, based on the low temperature time-resolved emission spectrum and the temperature dependence of photoluminescence (PL) and TRPL, carriers are found to be strongly confined and free excitonic behaviors at room temperature in InGaN/GaN rods heterostructure, which may causes highly brightness green luminescence emission in InGaN/GaN rods. In the part two, we found an evidence of the cavity effect in InGaN disk measured by TRPL at low temperature. PL and TRPL measured at normal and along the nanorods at room and low-temperature, confirm that cavity effect exists in InGaN disk with GaN nanorods. Currently, we cannot precisely defined Purcell factor in our system yet. This is become of long PL decay time of pure InGaN disk luminescence which exceeds our instrument limitation and two PL decay times in InGaN disk with GaN nanorods at normal detection. Nevertheless, a qualitative description of Purcell effect and confirm cavity effect in InGaN disk/GaN nanorods are given.