| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 96 === In this thesis, p-channel and n-channel vertical organic triodes are investigated. Majority of the vertical devices are current driven. Moreover, they lack an apparent saturation region and a low on/off current ratio. Therefore, we demonstrate the performance enhancement of pentacene-based vertical organic triodes by adjusting the rectification ratio of base-collector (CB) Schottky diodes. This device exhibits a high output current of 80 μA at VBE = –5 V and VCE = –7 V and a maximum on/off current ratio of 210 at the CuPc/CB diode thickness ratio of 0.5. This kind of voltage-controlled transistors can be cascaded with a load to form an inverter which frequency response is up to kilo-hertz. In order to realize the complementary inverters, the fabrication and the characteristics of n-channel vertical organic diodes are investigated. The develop of C60-based triodes with similar device structures also proves the vertical structure is suitable for alternate organic materials, even n-type materials. This device exhibits a high output current of 400 μA at VBE = 7 V and VCE = 6 V. Finally, we integrate a C60-based vertical triode with a pentacene-based vertical triode to perform the vertical-type organic complementary inverters. It indeed increases the possibility of applying the vertical-type organic triodes to the integrated circuits.
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