Realization of SnO2 and In2O3 Thin Film Transistors through Reactive Evaporation Process
碩士 === 國立清華大學 === 電子工程研究所 === 96 === In this thesis, the indium oxide (In2O3) and the tin oxide (SnO2) thin film transistors were fabricated on the SiO2 gate dielectric by using reactive thermal evaporation process in the present of high purity oxygen. Different from the previous reports, the fabric...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61043739433297541349 |