Sapphire removal and patterned sapphire substrates fabrication on GaN light emitting diode utilizing wet chemical etching technology

Sapphire removal and patterned sapphire substrates fabrication on GaN light emitting diode utilizing wet chemical etching technology

碩士 === 國立臺灣大學 === 光電工程學研究所 === 96 === Recently, wide-bandgap semiconductors have been attracting great interest for applications to optoelectronic devices such as light-emitting diodes (LEDs), for last few years, InGaN/GaN-based blue light-emitting diodes (LEDs) have been successfully fabricated and...

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Bibliographic Details
Main Authors:	Min-Hsin Lo, 羅閔馨
Other Authors:	Yun-Li Li
Format:	Others
Language:	zh-TW
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/15038180323087161699

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