Optical Studies on InGaN/GaN Nanostructures
碩士 === 國立臺灣大學 === 光電工程學研究所 === 96 === In this research, we first demonstrate superior optical quality of a-plane GaN grown on r-plane sapphire substrate based on the flow-rate modulation epitaxy (FME) technique, in which the Ga atom supply is alternatively switched on and off with continuous nitroge...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78939477096933838064 |