low temperature synthesis of GaN nanowires by TEGa-DMHy MOCVD system

• Main Authors: Wei-Ta Lai, 賴韋達
• Other Authors: Lu-Sheng Hong
• Format: Others
• Language: zh-TW
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/04651723669477883945

碩士 === 國立臺灣科技大學 === 化學工程系 === 96 === Gallium nitride (GaN) nanowires have been synthesized by metalorganic chemical vapor deposition (MOCVD) technique using dimethylhydrazine (DMHy) and triethylgallium (TEGa) as the reactants at low temperatures ranging from 480℃ to 655℃. Emphasis of this study is placed on evaluating the possibility of using DMHy, a new nitrogen precursor with low decomposition temperature, for developing low temperature process of GaN nanowires growth. This newly proposed process may hold great promise for applications in solar cell on glass substrate. Moreover, the nanowires diameter and growth rate is controlled by V/III input ratio in TEGa-DMHy MOCVD system, higher V/III input ratio results in smaller diameter and higher growth rate. TEM results show that many of the synthesized nanowires are of diameters less than the Bohr radius of GaN (~11 nm) at higher V/III input ratio (V/III=35). Hence, this propose makes possible further investigations of the quantum-confinement effects in transport and optoelectronic properties of GaN.