Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System

碩士 === 國立臺灣科技大學 === 化學工程系 === 96 === In this thesis, the hydrogenated microcrystalline silicon (μc-Si:H) intrinsic layer was deposited by very-high-frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD). The influence of deposition conditions on VHF plasma were characterized by in-situ op...

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Main Authors:	Zong-lin Chen, 陳宗麟
Other Authors:	Lu-Sheng Hong
Format:	Others
Language:	zh-TW
Published:	2008
Online Access:	http://ndltd.ncl.edu.tw/handle/13271612605960491113

id	ndltd-TW-096NTUS5063087
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spelling	ndltd-TW-096NTUS50630872016-05-13T04:15:17Z http://ndltd.ncl.edu.tw/handle/13271612605960491113 Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System 以超高頻矽甲烷電漿化學氣相沉積系統製備微晶矽膜之研究 Zong-lin Chen 陳宗麟碩士國立臺灣科技大學化學工程系 96 In this thesis, the hydrogenated microcrystalline silicon (μc-Si:H) intrinsic layer was deposited by very-high-frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD). The influence of deposition conditions on VHF plasma were characterized by in-situ optical emission spectroscopy (OES). The effect of varied power density, reaction pressure, distance between parallel electrodes and diluted ratio of hydrogen gases were also investigated. A close relationship between OES intensity and thin film structure was found. Therefore, the optimal deposition conditions can be established by OES. Lu-Sheng Hong 洪儒生 2008 學位論文 ; thesis 73 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立臺灣科技大學 === 化學工程系 === 96 === In this thesis, the hydrogenated microcrystalline silicon (μc-Si:H) intrinsic layer was deposited by very-high-frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD). The influence of deposition conditions on VHF plasma were characterized by in-situ optical emission spectroscopy (OES). The effect of varied power density, reaction pressure, distance between parallel electrodes and diluted ratio of hydrogen gases were also investigated. A close relationship between OES intensity and thin film structure was found. Therefore, the optimal deposition conditions can be established by OES.
author2	Lu-Sheng Hong
author_facet	Lu-Sheng Hong Zong-lin Chen 陳宗麟
author	Zong-lin Chen 陳宗麟
spellingShingle	Zong-lin Chen 陳宗麟 Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System
author_sort	Zong-lin Chen
title	Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System
title_short	Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System
title_full	Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System
title_fullStr	Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System
title_full_unstemmed	Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System
title_sort	microcrystalline silicon films prepared by vhf sih4-pecvd system
publishDate	2008
url	http://ndltd.ncl.edu.tw/handle/13271612605960491113
work_keys_str_mv	AT zonglinchen microcrystallinesiliconfilmspreparedbyvhfsih4pecvdsystem AT chénzōnglín microcrystallinesiliconfilmspreparedbyvhfsih4pecvdsystem AT zonglinchen yǐchāogāopínxìjiǎwándiànjiānghuàxuéqìxiāngchénjīxìtǒngzhìbèiwēijīngxìmózhīyánjiū AT chénzōnglín yǐchāogāopínxìjiǎwándiànjiānghuàxuéqìxiāngchénjīxìtǒngzhìbèiwēijīngxìmózhīyánjiū
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Microcrystalline Silicon Films Prepared by VHF SiH4-PECVD System

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