| Summary: | 碩士 === 國立臺灣科技大學 === 光電工程研究所 === 96 === We use Sol-gel method to develop PSG solution which will be the Phosphorus diffuse source, and coat it on single crystalline silicon wafer by spin-coating method; therefore, a p-n junction is in silicon wafer by high temperature annealing. We make p-n diode on polished single crystalline silicon wafer, and the ideal factor is 1.52. Using the same method to make solarcell, though it is no anti-reflection structure and anti-reflection coating, the conversion efficiency is 9.07%.We use Sol-gel method to make TiO2 solution which will be anti-reflection coating. We spin-coat TiO2 solution on textured single crystalline silicon wafer and anneal it. The average reflectivity of visible light range is 5.51%. We add Phosphorus in TiO2 Sol-gel. After annealing, it form a p-n junction and anti-reflection coating at the same time. Using this method to make solarcell, and the conversion efficiency of the solarcell is 12.04%.
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