Characteristics of seed layer on the growth of ZnO nanorod arrays
碩士 === 國立聯合大學 === 材料科學工程學系碩士班 === 96 === A study on the growth characteristics of ZnO nanorod arrays from aqueous solution of zinc nitrate and HMTA using sol-gel ZnO, titanium oxide, and tin oxide as seed layers was carries out. X-ray diffraction (XRD), scanning electron microscopy (SEM), photolumin...
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ndltd-TW-096NUUM51590042015-10-13T14:52:52Z http://ndltd.ncl.edu.tw/handle/42617108608345964655 Characteristics of seed layer on the growth of ZnO nanorod arrays 種晶層對氧化鋅奈米棒成長特性之研究 Chan-Yuen Chang 張展源 碩士 國立聯合大學 材料科學工程學系碩士班 96 A study on the growth characteristics of ZnO nanorod arrays from aqueous solution of zinc nitrate and HMTA using sol-gel ZnO, titanium oxide, and tin oxide as seed layers was carries out. X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), water contact angle meter, field emission measurement were used tocharacterize the properties of the deposits. The parameters of the types of seed layer, heat treatment temperature, the concentration of HMTA, and growth time were employed to investigate their effect on the growth characteristics of the ZnO nanorod arrays. The enhanced crystallininty and grain size with increasing heat reatment temperature for the three types of seed alyers can significantly influence the nucleation density of the ZnO nanorod arrays. A decrease in the concentration of HMTA with increasing growth time can lead to the deposition of ZnO nanorod arrays with bilayered structure. The deposition of ZnO nanorod arrays using tin oxide as seed layer heat treated at 400℃ can have an optimum nucleation density and aspect ratio, which can then give a better field emission property of 2.7V threshold voltage and a maximum current density of 1.13mA. none 呂英治 2008 學位論文 ; thesis 124 zh-TW |
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碩士 === 國立聯合大學 === 材料科學工程學系碩士班 === 96 === A study on the growth characteristics of ZnO nanorod arrays from aqueous solution of zinc nitrate and HMTA using sol-gel ZnO, titanium oxide, and tin oxide as seed layers was carries out. X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), water contact angle meter, field emission measurement were used tocharacterize the properties of the deposits.
The parameters of the types of seed layer, heat treatment temperature, the concentration of HMTA, and growth time were employed to investigate their effect on the growth characteristics of the ZnO nanorod arrays. The enhanced crystallininty and grain size with increasing heat reatment temperature for the three types of seed alyers can significantly influence the nucleation density of the ZnO nanorod arrays. A decrease in the concentration of HMTA with increasing growth time can lead to the deposition of ZnO nanorod arrays with bilayered structure. The deposition of ZnO nanorod arrays using tin oxide as seed layer heat treated at 400℃ can have an optimum nucleation density and aspect ratio, which can then give a better field emission property of 2.7V threshold voltage and a maximum current density of 1.13mA.
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none Chan-Yuen Chang 張展源 |
author |
Chan-Yuen Chang 張展源 |
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Chan-Yuen Chang 張展源 Characteristics of seed layer on the growth of ZnO nanorod arrays |
author_sort |
Chan-Yuen Chang |
title |
Characteristics of seed layer on the growth of ZnO nanorod arrays |
title_short |
Characteristics of seed layer on the growth of ZnO nanorod arrays |
title_full |
Characteristics of seed layer on the growth of ZnO nanorod arrays |
title_fullStr |
Characteristics of seed layer on the growth of ZnO nanorod arrays |
title_full_unstemmed |
Characteristics of seed layer on the growth of ZnO nanorod arrays |
title_sort |
characteristics of seed layer on the growth of zno nanorod arrays |
publishDate |
2008 |
url |
http://ndltd.ncl.edu.tw/handle/42617108608345964655 |
work_keys_str_mv |
AT chanyuenchang characteristicsofseedlayeronthegrowthofznonanorodarrays AT zhāngzhǎnyuán characteristicsofseedlayeronthegrowthofznonanorodarrays AT chanyuenchang zhǒngjīngcéngduìyǎnghuàxīnnàimǐbàngchéngzhǎngtèxìngzhīyánjiū AT zhāngzhǎnyuán zhǒngjīngcéngduìyǎnghuàxīnnàimǐbàngchéngzhǎngtèxìngzhīyánjiū |
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1717759825879760896 |