Growing Li-doped p-type ZnO thin film by ultrasonic spray method
碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === In this study, the p-type ZnO films were grown on the glass substrates by ultrasonic spray method. The structure properties of ZnO thin films were characterized by X-ray diffraction (XRD). The surface morphology was characterized by atomic force microscopy (AF...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tnnw8c |
| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系研究所 === 96 === In this study, the p-type ZnO films were grown on the glass substrates by ultrasonic spray method. The structure properties of ZnO thin films were characterized by X-ray diffraction (XRD). The surface morphology was characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The electric properties was measured by Hall-effect measurement.
Results of X-ray diffraction reveal that the Li atoms were successfully occupied the Zn sites, and make the (101) peak shift to higher value. The Hall-effect measurement shows that we obtained the best electronic results when the grown temperature was at 550℃. The ZnO with Li-doping of 1.0at.％ exhibits a low resistivity of 0.258 Ω -cm, high hole concentration of 3.44×1018 cm-3 and high mobility of 7.05 cm2/Vs. In conclusion, the Li-doped p-type ZnO films were successfully grown by ultrasonic spray method.
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