| Summary: | 碩士 === 雲林科技大學 === 光學電子工程研究所 === 96 === In this work, polycrystalline silicon films were formed by metal induced crystallization (MIC) of the amorphous silicon that can be used to improve the performance of the silicon thin film solar cells. MIC process has a lot of advantage, including low-temperature, low-cost, simple, capable for large-scale production, and compatible with glass substrates. In this work, the thickness ratio of silicon to aluminum is 1:1 and the annealing temperature is 550℃ for the MIC of poly-Si films, while the annealing time has been varied. The poly-Si MIC results were characterized by FE-SEM, XRD, AES, and SIMS. The best MIC of poly-Si films was obtained with an annealing temperature of 550℃ and an annealing time of 6 hours. Thin film solar cell with p-type and n-type amorphous silicon films has been compared to the thin film solar cell with p-type polycrystalline silicon film by MIC and n-type amorphous silicon film in this work.
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