Designs and implementations of 2.4GHz RF front-end integrated circuits
碩士 === 元智大學 === 通訊工程學系 === 96 === This thesis utilizes the TSMC 3P3M 0.35um SiGe and 1P6M 0.18um CMOS technologies to design the stand-alone power amplifier (PA) and the front-end chip including PA、low noise amplifier(LNA) and transmit/receive for WLAN 802.11g and Bluetooth systems. The linearizer i...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82123727107660135874 |
| Summary: | 碩士 === 元智大學 === 通訊工程學系 === 96 === This thesis utilizes the TSMC 3P3M 0.35um SiGe and 1P6M 0.18um CMOS technologies to design the stand-alone power amplifier (PA) and the front-end chip including PA、low noise amplifier(LNA) and transmit/receive for WLAN 802.11g and Bluetooth systems.
The linearizer is added for PAs to satisfy high power and high linearity demands. This design approach has the advantages of low quiescent current and higher output power simultaneously. In addition the multi-gate topology is used for LNA design to improve the intermodulation performances. In the switch design, the stacked FETs with the gate resistor are adopted to increase the power capability and improve the linearity.
Finally, the differences between simulations and measurement results are addressed with some possible improvement directions.
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