Characterization and Analysis of Power Semiconductor Devices

• Main Authors: Kao-Te Tseng, 曾高德
• Other Authors: 李坤彥
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/90810442521020686411

碩士 === 國立中正大學 === 電機工程所 === 97 === Since the use of power device grow extensively in power electronic application, it is crucial to know the characteristics and reliability of the power device before designing the circuit. This study is trying to measure and analyze the characteristics and reliability of power semiconductor device by exploring and analyzing the influence of parasitic components inside the power device. The study further discusses the reasons of power device breakdown. Due to the fact that metal oxide semiconductor capacitor (MOS-C) is the core component of power metal oxide semiconductor field effect transistor (Power MOSFET), the study also discusses the oxide of MOS-C and further introduces the introduces the manufacture process of MOS-C.