Characterization and Analysis of Power Semiconductor Devices
碩士 === 國立中正大學 === 電機工程所 === 97 === Since the use of power device grow extensively in power electronic application, it is crucial to know the characteristics and reliability of the power device before designing the circuit. This study is trying to measure and analyze the characteristics and reliabili...
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ndltd-TW-097CCU054421062016-05-04T04:26:07Z http://ndltd.ncl.edu.tw/handle/90810442521020686411 Characterization and Analysis of Power Semiconductor Devices 功率半導體元件特性量測與分析 Kao-Te Tseng 曾高德 碩士 國立中正大學 電機工程所 97 Since the use of power device grow extensively in power electronic application, it is crucial to know the characteristics and reliability of the power device before designing the circuit. This study is trying to measure and analyze the characteristics and reliability of power semiconductor device by exploring and analyzing the influence of parasitic components inside the power device. The study further discusses the reasons of power device breakdown. Due to the fact that metal oxide semiconductor capacitor (MOS-C) is the core component of power metal oxide semiconductor field effect transistor (Power MOSFET), the study also discusses the oxide of MOS-C and further introduces the introduces the manufacture process of MOS-C. 李坤彥 2009 學位論文 ; thesis 74 zh-TW |
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碩士 === 國立中正大學 === 電機工程所 === 97 === Since the use of power device grow extensively in power electronic application, it is crucial to know the characteristics and reliability of the power device before designing the circuit. This study is trying to measure and analyze the characteristics and reliability of power semiconductor device by exploring and analyzing the influence of parasitic components inside the power device. The study further discusses the reasons of power device breakdown. Due to the fact that metal oxide semiconductor capacitor (MOS-C) is the core component of power metal oxide semiconductor field effect transistor (Power MOSFET), the study also discusses the oxide of MOS-C and further introduces the introduces the manufacture process of MOS-C.
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author2 |
李坤彥 |
author_facet |
李坤彥 Kao-Te Tseng 曾高德 |
author |
Kao-Te Tseng 曾高德 |
spellingShingle |
Kao-Te Tseng 曾高德 Characterization and Analysis of Power Semiconductor Devices |
author_sort |
Kao-Te Tseng |
title |
Characterization and Analysis of Power Semiconductor Devices |
title_short |
Characterization and Analysis of Power Semiconductor Devices |
title_full |
Characterization and Analysis of Power Semiconductor Devices |
title_fullStr |
Characterization and Analysis of Power Semiconductor Devices |
title_full_unstemmed |
Characterization and Analysis of Power Semiconductor Devices |
title_sort |
characterization and analysis of power semiconductor devices |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/90810442521020686411 |
work_keys_str_mv |
AT kaotetseng characterizationandanalysisofpowersemiconductordevices AT cénggāodé characterizationandanalysisofpowersemiconductordevices AT kaotetseng gōnglǜbàndǎotǐyuánjiàntèxìngliàngcèyǔfēnxī AT cénggāodé gōnglǜbàndǎotǐyuánjiàntèxìngliàngcèyǔfēnxī |
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1718258129342300160 |