Temperature-dependent characteristics of the polymer light-emitting diodes
碩士 === 長庚大學 === 光電工程研究所 === 97 === In this work, we reported the organic semiconductor devices of disorder materials concerning the thermal-related attributes arising from ITO/PEDOT/PFO/Ca/Al polymer light-emitting diode (PLEDs) structure. The characteristics of device have been studies as temperatu...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60908256393330758928 |
| Summary: | 碩士 === 長庚大學 === 光電工程研究所 === 97 === In this work, we reported the organic semiconductor devices of disorder materials concerning the thermal-related attributes arising from ITO/PEDOT/PFO/Ca/Al polymer light-emitting diode (PLEDs) structure. The characteristics of device have been studies as temperature- and excitation-dependent measurement of electroluminescence (EL). The temperature- and current-dependent EL spectra from the sample were measured over a temperature range from 300 to 20 K with current 0.5 mA and 0.1 mA and explained well by the localized carrier hopping and thermalization process. Furthermore, the thermal effect on the EL spectra with increasing driving current is also discussed in this work.
In this article, we also have examined the temperature dependence of the exponential trap model of the SCLC and determine trap parameters from the temperature dependent J(V) characteristics at two or more temperatures. The proposed procedure is simple and can be used to characterize the material with reasonable accuracy.
In conclusion, this study determined trap parameters for exponentially distributed traps in polymers and organic semiconductors using temperature dependent J(V) characteristics. The technique is applicable when the J(V) characteristics follow a power law.
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